Spatially resolved spin-injection probability for gallium arsenide.

Quantum interference control of ballistic pure spin currents in semiconductors.

We demonstrate all-optical quantum interference injection and control of a ballistic pure spin current (without an accompanying charge current) in GaAs/AlGaAs quantum wells, consisting of spin-up electrons traveling in one direction and spin-down electrons traveling in the opposite direction. This current is generated through quantum interference of one- and two-photon absorption of approximate...

Optical studies of ballistic currents in semiconductors [Invited]

We present a summary of recent studies of ballistic currents using nonlinear optical techniques. Quantum interference between oneand two-photon absorption pathways is used to inject and control ballistic currents in GaAs samples. With this, a pure charge current, pure spin current, or spin-polarized charge current can be injected by changing the polarization configuration of the two pump pulses...

Spin noise spectroscopy in GaAs (110) quantum wells: access to intrinsic spin lifetimes and equilibrium electron dynamics.

In this Letter, the first spin noise spectroscopy measurements in semiconductor systems of reduced effective dimensionality are reported. The nondemolition measurement technique gives access to the otherwise concealed intrinsic, low temperature electron spin relaxation time of n-doped GaAs (110) quantum wells and to the corresponding low temperature anisotropic spin relaxation. The Brownian mot...

Detection of electrically modulated inverse spin hall effect in an Fe/GaAs microdevice.

We report the detection of the inverse spin Hall effect (ISHE) in n-gallium arsenide (n-GaAs) combined with electrical injection and modulation of the spin current. We use epitaxial ultrathin-Fe/GaAs injection contacts with strong in-plane magnetic anisotropy. This allows us to simultaneously perform Hanle spin-precession measurements on an Fe detection electrode and ISHE measurements in an app...

Spatially resolved study of polarized micro-photoluminescence spectroscopy on single GaAs nanowires with mixed zincblende and wurtzite phases