Investigation of Silicon Oxide (SiOx) Nanowires Growth with Gold/Chromium Catalysts
نویسنده
چکیده
We report the growth of high density silicon Oxide (SiOx) nanowires at an elevated temperature. The nanowires density is enhanced by inserting a thin layer of chromium metal in gold/Si catalyst system. The SiOx nanowires were grown with gold/chromium catalysts stack layer on the Si substrate at different temperatures ranging from 1050oC to 1150oC. Under the catalysis reaction of the gold/chromium, the growth density of the SiOx nanowires is increased, since the chromium layer acts as a diffusion barrier and retards the gold diffusion downwards into the Si substrate. Key-words: Nanowires, Gold, Chromium, thermal annealing, Silicon Substrate
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Role of Chromium Intermediate Thin-Film on the Growth of Silicon Oxide (SiOx) Nanowires
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