Photoinduced doping of thin amorphous WO, films
نویسنده
چکیده
During cxposurc of thin amorphous WO, films to UV light, both the optical absorptivity and thc electrical conductibity increase, Using optically excited surface plasmons. we were ablc to mcnsure even subtle changes of the absorpt~vity of 10 ntn thtck films simuFtaneously with their electrical resistivity a t varivus temperatuscs. Our measurements show that the temperature dependence and thc dcpendcncc on the denslty-of-states of the electrical conductivity in WO, can he explained by variable-range hopping of charge carriers betwecn optically excited states ncar thc Fcrmi Icvcl. Accordingly UV irradiation of tunpstcn o x ~ d c an bc understood in temq o f a photoinduccd doping proccss which may h a ~ c rclcvancc fur technical applications.
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