High Gauge Factor Piezoresistors Using Aluminium Induced Crystallisation of Silicon at Low Thermal Budget
نویسندگان
چکیده
This paper reports on polysilicon piezo-resistors that are fabricated at a low thermal budget using aluminium-induced-crystallization (AIC) of ultra-high-vacuum e-beam evaporated silicon films. By in-situ phosphorus doping of precursor amorphous silicon films e-beam evaporated at room temperature on aluminium layer, we are able to increase and control the gauge factor of the polysilicon films formed by AIC at 450 °C. Piezo-resistors made from the polysilicon films are integrated on microcantilever beams to measure their gauge factors. Gauge factors as high as 62 is obtained for 2 × 1018/cm3 phosphorus doping level in the precursor amorphous silicon film. The measured gauge factors are significantly higher than previously reported values for polysilicon films.
منابع مشابه
Thin film pc-Si by aluminium induced crystallization on metallic substrate
Thin film polycrystalline silicon (pc-Si) on flexible metallic substrates is promising for low cost production of photovoltaic solar cells. One of the attractive methods to produce pc-Si solar cells consists in thickening a large-grained seed layer by epitaxy. In this work, the deposited seed layer is made by aluminium induced crystallization (AIC) of an amorphous silicon (a-Si) thin film on me...
متن کاملCrystallisation of Foturan® glass–ceramics
hotostructurable glass–ceramics are suitable for 3-dimensional microfabrication and, in some instances, can be used as an alternative material o silicon in the microfabrication of micro-electro-mechanical-system (MEMS) devices. Foturan® is a photosensitive lithium–aluminium–silicate lass that can be structured by an exposure to UV light, followed by a thermal treatment and an etching step. In t...
متن کاملCharacteristic and analysis of silicon germanium material as MEMS pressure sensor
The silicon based pressure sensor is one of the major applications of the piezoresistive sensor. This paper focuses on the structural design and optimization of the MEMS piezoresistive pressure sensor to enhance the sensitivity. A finite element method (FEM) is adopted for designing the performance of a silicon based piezoresistive pressure sensor. Thermal as well as pressure loading on the sen...
متن کاملComparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements
We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placemen...
متن کاملTemperature Dependence of Gauge Factor of Printed Piezoresistive Layers Embedded in Organic Coatings
The paper reports on temperature behavior of strain sensitivity of recently introduced screen printing technology facilitating the realization of silver and carbon black piezoresistors embedded in organic coatings. Piezoresistive layers were prepared by screen printing directly on the top of the organic coating. Since no glue or carrying substrates are between the sensitive element and the devi...
متن کامل