A comprehensive model for PMOS NBTI degradation: Recent progress
نویسندگان
چکیده
Negative bias temperature instability (NBTI) is a well-known reliability concern for PMOS transistors. We review the literature to find seven key experimental features of NBTI degradation. These features appear mutually inconsistent and have often defied easy interpretation. By reformulating the Reaction–Diffusion model in a particularly simple form, we show that these seven apparently contradictory features of NBTI actually reflect different facets of the same underlying physical mechanism. 2006 Elsevier Ltd. All rights reserved.
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 47 شماره
صفحات -
تاریخ انتشار 2007