Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

Deep level defects in n-type GaN grown by molecular beam epitaxy

Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E150.23460.006, E250.57860.006, E350.65760.031, E450.96160.026, and E550.24060.012 eV. Among these, the levels labeled E1 , E2 , and E3 are interpreted as corresponding to deep levels...

Hydride Vapor Phase Epitaxial Growth of Thick GaN Layers with Improved Surface Flatness

Thick GaN layers have been grown by hydride vapor phase epitaxy (HVPE) on different GaN templates grown by metalorganic vapor phase epitaxy. Crack formation could be reduced by using a hydrogen/nitrogen carrier gas mixture. By carefully optimizing the growth conditions in the final stage of the process, excellent surface morphologies could be obtained at still acceptably high growth rates. Up t...

Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy

Optimizing Structured SiN-masks for Self Separation of Full 2”-GaN Wafers by Hydride Vapor Phase Epitaxy

Using a previously shown method, we prepared 2”-GaN wafers as templates for a self separation process. Self separation is happening during cooldown after growing thick layers of GaN in our hydride vapor phase epitaxy (HVPE) reactor. Our templates consist of GaN grown by metalorganic vapor phase epitaxy (MOVPE) directly on sapphire. These GaN layers are masked with 200nm of SiN that are structur...

Iron Doping in Hydride Vapor Phase Epitaxy of GaN

In order to overcome problems with non-uniform iron (Fe) doping in our GaN layers grown by hydride vapor phase epitaxy, we have optimized the construction of our ferrocene doping channel. By pre-heating the hydrogen carrier gas before entering the hot bubbler, a constant Fe supply could be established. Moreover, losses of the precursor gas in the reactor could be minimized by a re-design of the...