Excitonic Radiative Dynamics in Multiple Quantum Wells

نویسنده

  • S. CITRIN
چکیده

The fundamental intrinsic radiative process associated with excitons in semiconductor multiple quantum wells is discussed within the context of exciton polaritons. Multiple quantum wells in which each well is randomly displaced from its ideal periodic position are discussed in order to investigate the effect of disorder on excitonic radiative widths. The coherent transpori of excitons in multiple quantum wells is discussed.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Excitonic field screening and bleaching in InGaN/GaN multiple quantum wells

Photoinduced carrier dynamics in a sequence of InGaN/GaN multiple quantum wells (MQWs) are studied by employing steady state and ultrafast spectroscopy at room temperature. Time-resolved photoluminescence (PL) measured short carrier lifetimes of ,140 ps at room temperature. Steady state differential transmission was used to measure the in-well field screening due to the photoinjected carriers. ...

متن کامل

Time resolved excitonic coherent polarization dynamics in GaAs multiple quantum wells

We investigate pump induced modulation in the temporal evolution of the excitonic coherent polarization generated by a probe pulse in GaAs multiple quantum wells. For this, we perform fs time resolved pump-probe reflectivity measurements using frequency upconversion at both positive and negative pump-probe delays. A contribution arising from interference of excitonic linear and nonlinear polari...

متن کامل

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells

We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN multiple quantum wells in the presence of n-type background doping by time-resolved photoluminescence. Based on Fermi’s golden rule and Saha’s equation, we decompose the radiative recombination channel into an excitonic and an electron-hole pair contribution, and extract the injected carrier-density-dependent bim...

متن کامل

The effects of crystallographic orientation and strain on the properties of excitonic emission from wurtzite InGaN/GaN quantum wells

We have examined in detail crystal orientation effects on the properties of excitonic emission from wurtzite InxGa1−xN/GaN quantum wells (QWs) with piezoelectric polarization using exciton binding and transition energy calculations based on a single-band effective-mass theory. We show numerical results for the bandgaps, effective heavy-hole masses, piezoelectric polarizations and fields, excito...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2005