Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon
نویسنده
چکیده
The effect of stress (exerted by hydrostatic pressure of argon ambient enhanced up to 1.2 GPa) on the creation of oxygen-related defects in annealed Czochralski grown silicon (Cz-Si) was investigated. Concentrations of oxygen interstitials and of dislocations in Cz-Si samples with before-created nucleation centres for oxygen precipitation were markedly lower after pressure treatment at 1120 to 1230 K, in comparison to the ones in the samples annealed at ambient pressure. Increased X-ray diffuse scattering intensity and diminished intensity of photoluminescence after pressure-annealing proved, however, also the stress-stimulated creation of small cluster-like defects. A qualitative explanation of the observed effects was proposed.
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