Transition voltage of AlGaN/GaN heterostructure MSM varactor with two-dimensional electron gas

REGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal–Semiconductor–Metal Two-Dimensional Electron Gas Varactor

In this paper, a varactor with metal–semiconductor–metal diodes on top of the (NH 4) 2 S/P 2 S 5-treated AlGaN/GaN two-dimensional electron gas epitaxial structure (MSM-2DEG) is proposed to the surge protection for the first time. The sulfur-treated MSM-2DEG varactor properties, including current–voltage (I–V), capacitance–voltage (C–V), and frequency response of the proposed surge protection c...

Modelling the Threshold Voltage for p-channel E-mode GaN HFETs

P-channel GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistors (MOSHFETs) utilising a polarization induced two Dimensional Hole Gas (2DHG) operate inherently in depletion mode (D-mode). The condition for their conversion to E-mode operation is examined via analytical expressions for the threshold voltage and verified via TCAD simulations. Between the two heterostructures (i) c...

Room-Temperature mobility above 2200 cm2/Vs of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

Study of fluorine bombardment on the electrical properties of AlGaN/GaN heterostructures

The effects of fluorine ion bombardment on the channel transport properties of AlGaN /GaN heterostructures have been investigated. Ion bombardment of the heterostructure was carried out within a CF4 plasma in a reactive ion etching system at various self-bias voltages. Hall mobility and sheet electron concentration for the two-dimensional electron gas showed strong dependence on bombardment dur...

Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure

Persistent photoconductivity ͑PPC͒ effect associated with a two-dimensional electron gas ͑2DEG͒ in an AlGaN/GaN heterojunction device has been observed. As a consequence, the device was observed to be sensitive to light and the sensitivity was associated with a permanent photoinduced increase in the 2DEG carrier mobility and density. By formulating the PPC buildup and decay kinetics, we attributed ...