Experimental Study on MOSFET’s Flicker Noise under Switching Conditions and Modelling in RF Applications
نویسندگان
چکیده
The flicker noise mechanism under switching conditions is studied. Experimental results show that the baseband flicker noise is a superposition of upconverted gate flicker noise at each harmonic of the output current. Methods to reduce the flicker noise are discussed. Based on the measured results, the large signal flicker noise model for RF applications under switching conditions is proposed and validated by simulations and measurements. With the proposed model, the noise performance of a singlebalanced gilbert mixer for direct conversion applications is analysed and discussed.
منابع مشابه
A Low Flicker-Noise High Conversion Gain RF-CMOS Mixer with Differential Active Inductor
The design of a low noise figure (NF), high conversion gain (CG) double-balanced, Gilbert-cell mixer is presented. Since the noise figure of the RF CMOS mixer is strongly affected by flicker noise (1/f), a dynamic current injection technique is used to reduce the flicker noise corner frequency. The current injection circuitry comprises 3 pMOS to inject current pulses at the switching instants. ...
متن کاملModeling and Simulation of Substrate Noise in Mixed-Signal Circuits Applied to a Special VCO
The mixed-signal circuits with both analog and digital blocks on a single chip have wide applications in communication and RF circuits. Integrating these two blocks can cause serious problems especially in applications requiring fast digital circuits and high performance analog blocks. Fast switching in digital blocks generates a noise which can be introduced to analog circuits by the common su...
متن کاملA Study of Flicker Noise in MOS Transistor Under Switched Bias Condition
with K, γ, constants, and γ ≈ 1. It is quite well accepted that the sources of low frequency noise are mainly carrier number fluctuations due to random trapping–detrapping of carriers in energy states, named ‘traps’, near the surface of the semiconductor. From some time ago, switched biasing has been proposed as a technique for reducing the flicker noise itself in MOSFET’s [1]. An intuitive exp...
متن کاملTail Current Flicker Noise Reduction in LC VCOs by Complementary Switched1 Biasing
Abstruct-A new LC voltagecontrolled oscillator circuit topology is proposed, in which the flicker noise generated by the tail transistor is noticeably reduced by utilizing the phenomenon of flicker noise intrinsic reduction due to switched biasing. A macro model of MOSFET under switched biasing is used to prove the idea. Circuit simulations are done on two oscillators with the same tail current...
متن کامل