Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering

نویسندگان

  • M. F. Cerqueira
  • M. V. Stepikhova
  • J. A. Ferreira
چکیده

Microcrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 m with a full width at half maximum of about 8 nm. When the temperature varies between 5K and 300K the photoluminescence decreases only five fold, in contrast to the behaviour reported for monocrystalline silicon.

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تاریخ انتشار 2011