Atomistic considerations of stressed epitaxial growth from the solid phase
نویسندگان
چکیده
A dual-timescale model of stressed solid-phase epitaxial growth is developed to provide a basis for the atomistic interpretation of experiments where the macroscopic growth velocity of (0 0 1) Si was studied as a function of uniaxial stress applied in the plane of the growth interface. The model builds upon prior empirical modeling, but is a significant improvement as it provides solid physical bases as to the origin of growth being dual-timescale and more accurately models growth kinetics. 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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