Electrical characterization of low defect density nonpolar (112̄0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)
نویسندگان
چکیده
Shuji Nakamura University of California–Santa Barbara, Materials Department, Santa Barbara, California 93106; Exploratory Research for Advanced Technology, Japan Science and Technology Corporation (NICP/ERATO JST) Group, University of California–Santa Barbara, Santa Barbara, California 93106; and University of California–Santa Barbara, Electrical and Computer Engineering Department, Santa Barbara, California 93106
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