Defects in Ge and Si caused by 1 MeV Si+ implantation
نویسندگان
چکیده
Cross-sectional transmission electron microscopy was used to study defect formation and evolution in the !001" Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si+ at a dose of 1 !1014 cm−2. As expected, upon annealing, the #311$ extended defects form and subsequently dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no #311$ defect formation is observed for this nonamorphizing implant after annealing at temperatures between 350 and 850 °C. Instead, for the MeV implant, small dotlike defects are observed in Ge, which dissolve upon annealing between 650 and 750 °C for 10 min. © 2008 American Vacuum Society. %DOI: 10.1116/1.2834557&
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