Deposition of High Quality Sol-Gel Oxides on Silicon
نویسنده
چکیده
We have fabricated high quality sol-gel derived silicate and aluminoborosilicate thin films deposited on silicon substrates. From capacitance vs voltage measurements we observe low interface trap densities (<10H/cm2eV) and very low densities of slow interface state (<101~ 2) in most films investigated. We have been able to make significant improvements over previous sol-gel derived oxides on silicon by controlling some of the key factors which effect the structure of the sol-gel derived thin films.
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