Comparison of H2 and N2 as carrier gas in MOVPE growth of InGaAsN quantum wells
نویسنده
چکیده
Differences in sample quality and nitrogen incorporation in InGaAsN quantum well samples grown by metal-organic vapor phase epitaxy using either H2 or N2 as the carrier gas are studied by several ex situ methods. The nitrogen incorporation increases while the indium content and the growth rate of the quantum wells decrease when using N2 as the carrier gas instead of H2. Also, the hydrogen incorporation into the quantum well is reduced by one order of magnitude. In addition, the in situ reflectance monitoring technique is used to monitor the material quality of the sample and the slope of the reflectance change is shown to be linearly dependent on the quantum well nitrogen content. r 2006 Elsevier B.V. All rights reserved. PACS: 81.70.Fy; 78.67.De; 81.05.Ea; 81.15.Gh
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