Fabrication of a Monolithically Integrated WDM Channel Selector Using Single Step Selective Area MOVPE and Its Characterization

An 8ch, 400 GHz monolithically integrated WDM channel selector featuring an array of quantum well semiconductor optical amplifiers (SOA) and arrayed waveguidegrating demultiplexer is presented. Reduction of fabrication complexity was achieved by using a single step selective area MOVPE to realize the different bandgap profiles for the SOA array and passive region. The selective growth mask dimensions were optimized by simulation. Dry-etching with short bending radii of 200 μm resulted in compact device size of 7 mm × 2.5 mm. Static channel selection with high ON-OFF ratio of > 40 dB was achieved. key words: WDM channel selector, selective area MOVPE, photonic integrated circuit, InGaAsP quantum well, semiconductor optical amplifier