Decay Dynamics in Disordered Systems: Application to Heavily Doped Semiconductors

نویسندگان

  • I. Kuskovsky
  • G. F. Neumark
  • V. N. Bondarev
  • P. V. Pikhitsa
چکیده

We have calculated, quantitatively, the time decay of donor-acceptor pair luminescence in compensated semiconductors, incorporating the effect of the potential fluctuations which exist in such materials. We show that the often-reported stretched-exponential decay law can here be derived rigorously, but only to a very close approximation, and, moreover, only provided that there is an alternate, activated, decay path. We also show that in the absence of such an alternate path, the decay is slower. We thus conclude that the stretched-exponential “law” provides good empirical fitting, but has no fundamental significance. [S0031-9007(98)05620-8]

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Radiation efficiency of heavily doped bulk n-InP semiconductor

Recombination of minority carriers in heavily doped n-InP wafers has been investigated using spectral and time-resolved photoluminescence at different temperatures. Studies of the transmitted luminescence were enabled by the partial transparency of the samples due to the Moss–Burstein effect. Temporal evolution of the transmitted luminescence shows virtually no effect of surface recombination b...

متن کامل

Structural and electrical properties of In-doped vanadium oxide thin films prepared by spray pyrolysis

The In-doped vanadium pentoxide nanostructures with different doping levels including 0, 10, 20 and 30 at.% were prepared by the spray pyrolysis technique. The prepared thin films were characterized by the x-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD results revealed that the films were crystalline in tetragonal phase. Increasing the In-doping level made the structure...

متن کامل

Tunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films

Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the 10 to 10 cm range, by infrared spectroscopy, first principle cal...

متن کامل

Heavily doped semiconductor nanocrystal quantum dots.

Doping of semiconductors by impurity atoms enabled their widespread technological application in microelectronics and optoelectronics. However, doping has proven elusive for strongly confined colloidal semiconductor nanocrystals because of the synthetic challenge of how to introduce single impurities, as well as a lack of fundamental understanding of this heavily doped limit under strong quantu...

متن کامل

Hall Effect and the Beauty and Challenges of Science

The properties of the Hall effect in relatively pu e,I lightdoped semiconductors are now generally well understood. Howeverthe Hall effect and mobility in heavily-doped semiconductors, whhave metal-like behavior, have been studied much less experimentand are still not fully understood theoretically. This paper reviews the Hall effect and related properties of heavily-dop...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1998