Silver incorporation in Ge–Se glasses used in programmable metallization cell devices

نویسندگان

  • M. Mitkova
  • M. N. Kozicki
چکیده

We investigate the nature of thin films formed by the photodissolution of Ag into Se-rich Ge–Se glasses for use in programmable metallization cell devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. The way in which Ag incorporates into the chalcogenide film during photodiffusion is examined using Rutherford backscattering spectroscopy analysis and Raman spectroscopy. The results suggest that an Ag-rich phase separates due to the reaction of Ag with free Se from the chalcogenide glass leaving a Gerich chalcogenide matrix. 2002 Elsevier Science B.V. All rights reserved. PACS: 73.61.J; 78.30.L; 85.25.H

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Nano-ionic nonvolatile memory devices – basic ideas and structural model of rigid Ge-S glasses as medium for them

One of the most fascinating applications of chalcogenide glasses is related to the formation of nanoionic conductive bridge nonvolatile memory. It is realized in programmable metallization cell (PMC) memory devices, which utilize the oxidation and reduction of nanoscale quantities of metal ions in solid electrolyte films. The formation of a robust but reversible conducting pathway by way of ele...

متن کامل

Microstructure, mechanical and thermal properties of chalcogenide glasses and glass-ceramics based on Se-As-Ge system nucleated by Sn

In particular, chalcogenide glasses and glass-ceramics are new materials that exhibit good transparency in infrared region (0.8-12µm). We can overcome the main weakness of these glasses by improving the hardness through controlling crystallization. In this paper, we report results of a study on chalcogenide glasses in the ternary system of As-Se-Ge with nominal composition of Snx (Se...

متن کامل

Electron Beam Effects in Ge–Se Thin Films and Resistance Change Memory Devices

Chalcogenide glasses are the advanced materials of choice for the emerging nanoionic memory devices – conductive bridge random access memory (CBRAM). To understand the nature of the effects occurring in these devices under influence of electron-beam radiation, the interaction of blanked chalcogenide films and nanostructured films containing chalcogenide glass and silver (Ag) source are studied....

متن کامل

Information storage using nanoscale electrodeposition of metal in solid electrolytes

Programmable metallization cell (PMC) memory is based on the electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte. It shows great promise as an ultrascalable solid state non-volatile memory as it requires low programming voltage and current, and has the ability for the storage cells to be physically sized at minimum lithographically defined dimensions. Sca...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2002