Field dependent transport properties in InAs nanowire field effect transistors.
نویسندگان
چکیده
We present detailed studies of the field dependent transport properties of InAs nanowire field-effect transistors. Transconductance dependence on both vertical and lateral fields is discussed. Velocity-field plots are constructed from a large set of output and transfer curves that show negative differential conductance behavior and marked mobility degradation at high injection fields. Two dimensional electrothermal simulations at current densities similar to those measured in the InAs NWFET devices indicate that a significant temperature rise occurs in the channel due to enhanced phonon scattering that leads to the observed mobility degradation. Scanning transmission electron microscopy measurements on devices operated at high current densities reveal arsenic vaporization and crystal deformation in the subject nanowires.
منابع مشابه
Transport properties of InAs nanowire field effect transistors: The effects of surface states
It is shown that interface trap states have pronounced effects on carrier transport and parameter extraction from top-gated InAs nanowire field effect transistors NWFETs . Due to slow surface state charging and discharging, the NWFET characteristics are time dependent with time constants as long as 45 s. This is also manifested in a time-dependent extrinsic transconductance that severely affect...
متن کاملSe-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors
We investigated the transport properties of lateral gate field effect transistors (FET) that have been realized by employing, as active elements, (111) B-oriented InAs nanowires grown by chemical beam epitaxy with different Se-doping concentrations. On the basis of electrical measurements, it was found that the carrier mobility increases from 103 to 104 cm2/(V × sec) by varying the ditertiarybu...
متن کاملDiameter-dependent electron mobility of InAs nanowires.
Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are ...
متن کاملBallistic InAs nanowire transistors.
Ballistic transport of electrons at room temperature in top-gated InAs nanowire (NW) transistors is experimentally observed and theoretically examined. From length dependent studies, the low-field mean free path is directly extracted as ~150 nm. The mean free path is found to be independent of temperature due to the dominant role of surface roughness scattering. The mean free path was also theo...
متن کاملSelf-consistent electrothermal Monte Carlo simulation of single InAs nanowire channel metal-insulator field-effect transistors
Electron transport and self-heating effects are investigated in metal-insulator field-effect transistors with a single InAs nanowire channel, using a three-dimensional electrothermal Monte Carlo simulator based on finite-element meshing. The model, coupling an ensemble Monte Carlo simulation with the solution of the heat diffusion equation, is carefully calibrated with data from experimental wo...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Nano letters
دوره 8 10 شماره
صفحات -
تاریخ انتشار 2008