Cu-Sn Intermetallic Compound Growth in Hot-Air-Leveled Tinat and below 100°C - Tyco Electronics

نویسنده

  • Joseph Haimovich
چکیده

Low-temperature intermetallic compound (lMC) growth in hot-air-leveled tin (HALT) at lower temperatures was investigated. A technique based on image analysis of backscatter electron scanning electron microscopy images was used to measure the average thickness of Cu-Sn IMC in HALT at 50°C, 75°C, and 100°C with a high degree of precision. The technique made it possible to observe new features of IMC growth in HALT at these temperatures. These measurements demonstrated that the parabolic growth law commonly used to describe IMC growth is not applicable to HALT, particularly at lower temperatures characteristic of storage and service: the conventional parabolic growth rate constant k is not a true constant but is a function of aging time. An alternative two-parameter equation for IMC growth has been proposed: the parameters, true parabolic growth rate K and equivalent preaging time t0, are true constants that do not vary with aging time. These parameters were determined for two kinds of HALT samples. The activation energy for lattice (bulk) diffusion derived from the true parabolic growth rates K is 11.8 kcal/mol. The growth parameters K and t0 can be used to estimate the solderability shelf life of HALT coatings. The activation energy can be used to calculate the IMC growth acceleration factors for temperatures within the applicable temperature range, and ultimately to develop relevant acceleration aging test treatments.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Interfacial Reactions Between Sn–58 mass%Bi Eutectic Solder and (Cu, Electroless Ni–P/Cu) Substrate

The growth kinetics of intermetallic compound layers formed between eutectic Sn–58Bi solder and (Cu, electroless Ni–P/Cu) substrate were investigated at temperature between 70 and 120◦C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn–58Bi/Cu and Sn–58Bi/electroless Ni–P system satisfied the parabolic law at given temperature range. As a whole, because the va...

متن کامل

Growth kinetics of Cu6Sn5 intermetallic compound at liquid-solid interfaces in Cu/Sn/Cu interconnects under temperature gradient

The growth behavior of intermetallic compounds (IMCs) at the liquid-solid interfaces in Cu/Sn/Cu interconnects during reflow at 250 °C and 280 °C on a hot plate was investigated. Being different from the symmetrical growth during isothermal aging, the interfacial IMCs showed clearly asymmetrical growth during reflow, i.e., the growth of Cu6Sn5 IMC at the cold end was significantly enhanced whil...

متن کامل

IMC Growth and Shear Strength of Sn-Ag-Bi-In/Au/Ni/Cu BGA Joints During Aging

The growth kinetics of intermetallic compound (IMC) layers formed between Sn-3Ag-6Bi-2In ball-grid-array (BGA) solder and Au/Ni/ Cu substrate by solid-state isothermal aging were examined at temperatures between 343 and 443K for 0 to 100 days. A quantitative analysis of the IMC layer thickness as a function of time and temperature was performed. The intermetallic layer exhibited a parabolic gro...

متن کامل

Interfacial fracture toughness of Pb-free solders

Increasing environmental concerns and pending government regulations have pressured microelectronic manufacturers to find suitable alternatives to Pb-bearing solders traditionally used in electronics packaging. Over recent years, Sn-rich solders have received significant attention as suitable replacements for Pbbearing solders. Understanding the behavior of intermetallics in Sn-rich solders is ...

متن کامل

Low Temperature Bonding of High Density Large Area Array Interconnects for 3D Integration

The results of bonding and stress testing of Cu/Sn-Cu bonded dice and Cu-Cu thermocompression bonded dice at 10μm and 15μm pitch in large area arrays are shown. The interconnect bonding process pressure and temperature required for the formation of low resistance (<100 mΩ), high yielding (99.99% individual bond yield), and reliable interconnects is described. In the case of Cu/Sn-Cu, use of a m...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1996