Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots

Implementation of silicon-quantum-dots (Si-QDs) as a floating gate in metal-oxide-semiconductor field-effect transistors (MOSFETs) has received increasing attention because of its potential advantage for multivalued memories operating reliably even at room temperature and above [1-3]. In this work, we focused on electron storage in Si-QDs stack structures and studied electron charging, discharging and retention characteristics of the stack structures as floating gate in MOS capacitors in comparison to those of a single Si-QDs floating gate.