The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC
نویسندگان
چکیده
Jens Eriksson, Ruth Pearce, Tihomir Iakimov, Chariya Virojanadara, Daniela Gogova, Mike Andersson, Mikael Syväjärvi, Anita Lloyd Spetz and Rositza Yakimova, The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC, 2012, Applied Physics Letters, (100), 24, 241607. http://dx.doi.org/10.1063/1.4729556 Copyright: American Institute of Physics (AIP) http://www.aip.org/
منابع مشابه
The effect of doping Graphene Quantum Dots with K, B, N, and Cl on its emitted spectrum
In this work, the effect of doping Graphene Quantum Dots (GQDs) on their emission spectra has been studied. First, graphene has been deposited on SiC substrate by using sublimation method. Second, doped-GQDs have been distributed on the surface of graphene via drop casting. The structure of the samples have been studied and characterized by X-ray diffraction (XRD), Scanning Electron Microscopy ...
متن کاملStructural and electronic properties of epitaxial graphene on SiC(0001): A review of growth, characterization, transfer doping and hydrogen intercalation
Graphene, a monoatomic layer of graphite hosts a two-dimensional electron gas system with large electron mobilities which makes it a prospective candidate for future carbon nanodevices. Grown epitaxially on silicon carbide (SiC) wafers, large area graphene samples appear feasible and integration in existing device technology can be envisioned. This article reviews the controlled growth of epita...
متن کاملLaterally Inhomogeneous Au Intercalation in Epitaxial Graphene on SiC(0 0 0 1): A Multimethod Electron Microscopy Study
Epitaxial graphene is of particular interest because of its tunable electronic structure. One important approach to tune the electronic properties of graphene relays on intercalating atomic species between graphene and the topmost silicon carbide layer. Here, we investigated the morphology and electronic structure of gold-intercalated epitaxial graphene using a multitechnique approach combining...
متن کاملAnalysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
We are aiming at understanding graphene formation mechanism on different SiC polytypes (6H, 4H and 3C) and orientations with the ultimate goal to fabricate large area graphene (up to 2 inch) with controlled number of mono layers and spatial uniformity. To reach the objectives we are using high-temperature atmospheric pressure sublimation process in an inductively heated furnace. The epitaxial g...
متن کاملStudies of Li intercalation of hydrogenated graphene on SiC(0001)
The effects of Li deposition on hydrogenated bilayer graphene on SiC(0001) samples, i.e. on quasi-freestanding bilayer graphene samples is studied using low energy electron microscopy, micro-low-energy electron diffraction and photoelectron spectroscopy. After deposition, some Li atoms form islands on the surface creating defects that are observed to disappear after annealing. Some other Li ato...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2012