Three Dimensional MEMS Supercapacitor Fabricated by DRIE on Silicon Substrate
نویسندگان
چکیده
Micro power sources are required to be used in autonomous microelectromechanical system (MEMS). In this paper, we designed and fabricated a three dimensional (3D) MEMS supercapacitor, which is consisting of conformal silicon dioxide/titanium/polypyrrole (PPy) layers on silicon substrate. At first, through-structure was fabricated on the silicon substrate by high-aspect-ratio deep reactive ion etching (DRIE) method, which enlarges the available surface area significantly. Then the SiO2/Ti/PPy layers grew sequentially on the through-structure . Finally, the supercapacitor was investigated by electrochemical methods.
منابع مشابه
Effect of Nano-Textured Silicon Substrate on the Synthesize of Metal Oxides Nanostructures
Metal oxides such as ZnO, SnO2 and W2O3 with super properties are widely used in the different fields of science and proper synthesis of these materials is of the great importance. In this work, some metal oxides with nano structures including SnO2 nanopyramids, V2O5 nanowires and hierarchical structure of SnO2 nan...
متن کاملVERY DEEP TRENCHES IN SILICON WAFER USING DRIE METHOD WITH ALUMINUM MASK
Abstract: In this paper, a DRIE process for fabricating MEMS silicon trenches with a depth of more than 250 m is described. The DRIE was produced in oxygen-added sulfur hexafluoride (SF6) plasma, with sample cooling to cryogenic temperature using a Plasmalab System 100 ICP 180 at different RF powers. A series of experiments were performed to determine the etch rate and selectivity of the some m...
متن کاملA single-mask substrate transfer technique for the fabrication of high-aspect-ratio micromachined structures
In this paper, a single-mask substrate transfer process for the fabrication of high-aspect-ratio (HAR) suspended structures is presented. The HAR silicon structures are fabricated using a deep reactive ion etching (DRIE) technique and then transferred to a glass wafer using silicon/thin film/glass anodic bonding and silicon thinning techniques. The HAR structures are released using self-aligned...
متن کاملA Low-Cost CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass
This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive sensing material. A full Wheatstone bridge was constructed through easy wiring allowed by the three metal layers in the 0.5 μm CMOS technology...
متن کاملMechanical de-tethering technique for Silicon MEMS etched with DRIE process
Getting Micro-Electro-Mechanical Systems (MEMS) out of a wafer after fabrication processes is of great interest in testing, packaging or simply using these devices. Actual solutions require special machines like wafer dicing machines, increasing time and cost of de-tethering MEMS. This article deals with a new solution for manufacturing mechanical de-tetherable silicon MEMS. The presented solut...
متن کامل