Anisotropic electron-transfer mobilities in diethynyl-indenofluorene-dione crystals as high-performance n-type organic semiconductor materials: remarkable enhancement by varying substituents.

نویسندگان

  • Xiao-Yu Zhang
  • Jin-Dou Huang
  • Juan-Juan Yu
  • Peng Li
  • Wei-Ping Zhang
  • Thoma Frauenheim
چکیده

In this study, the electron-transfer properties of alkynylated indenofluorene-diones with various substituents (SiMe3, SiPr3, and SiPh3) that function as n-type organic semiconductors were comparatively investigated at the first-principles DFT level based on the Marcus-Hush theory. The reorganization energies are calculated by the adiabatic potential-energy surface method, and the coupling terms are evaluated through a direct adiabatic model. The maximum value of the electron-transfer mobility of SiPr3 is 0.485 cm(2) V(-1) s(-1), which appears at the orientation angle of the conducting channel on the reference plane a-b near to 172°/352°. The predicted maximum electron mobility value of SiPr3 is nearly 26 times larger than that of SiPh3. This may be attributed to the largest number of intermolecular π-π interactions. In addition, the mobilities in all three crystals show remarkable anisotropic behavior. The calculated results indicate that SiPr3 could be an ideal candidate as a high-performance n-type organic semiconductor material. Our investigations not only give us an opportunity to completely understand the charge transport mechanisms, but also provide guidelines for designing materials for electronic applications.

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عنوان ژورنال:
  • Physical chemistry chemical physics : PCCP

دوره 17 38  شماره 

صفحات  -

تاریخ انتشار 2015