Amorphization of Ge and Si nanocrystals embedded in amorphous SiO2 by ion irradiation
نویسندگان
چکیده
M. Backman,1 F. Djurabekova,1,2,* O. H. Pakarinen,1 K. Nordlund,1 L. L. Araujo,3 and M. C. Ridgway3 1Helsinki Institute of Physics and Department of Physics, University of Helsinki, P.O. Box 43, Helsinki FI-00014, Finland 2Arifov Institute of Electronics, Durmon yuli 33, 100125 Tashkent, Uzbekistan 3Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200, Australia Received 31 July 2009; revised manuscript received 18 September 2009; published 19 October 2009
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