Experimental and theoretical results of room-temperature single-electron transistor formed by the atomic force microscope nano-oxidation process*
نویسندگان
چکیده
The single-walled carbon-nanotube ~SWNT! was grown directly onto the top of the conventional Si atomic force microscopy ~AFM! cantilever. This SWNT AFM cantilever was introduced into the AFM nano-oxidation process, which oxidized the titanium ~Ti! metal film on the atomically flat a-Al2O3 substrate and formed the ultranarrow oxidized titanium (TiOx) line of 5 nm width. This TiOx line was used as the tunnel junction of the single-electron transistor ~SET!, and the SET fabricated by this process showed room-temperature Coulomb oscillation with periods of 1 V. It was determined by three-dimensional simulation that the tunnel-junction capacitance shows only weak dependence on the tunnel-junction width. © 2000 American Vacuum Society. @S0734-2101~00!17004-6#
منابع مشابه
Application of Scanning Tunneling/atomic Force Microscope Nano- Oxidation Process to Room Temperature Operated Single Electron Transistor and Other Devices
Using a scanning tunneling microscope (STM) tip / atomic force microscope (AFM) cantilever as a cathode, the surface of titanium metal was oxidized to form a few tens of nanometers wide oxidized titanium line, which works as an energy barrier for the electron. Single electron transistors (SET), photoconductive switches, and high electron mobility transistors (HEMT) are fabricated using this pro...
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