Calculation of critical dimensions for wurtzite and cubic zinc blende coaxial nanowire heterostructures

نویسندگان

  • S. Raychaudhuri
  • E. T. Yu
چکیده

We employ a methodology, based on established approaches for determining the critical thickness for strain relaxation in planar films, to determine critical dimensions for coherently strained coaxial nanowire heterostructures. The model is developed and executed for various specific core-shell heterostructures in 111 zinc blende and 0001 wurtzite geometries. These calculations reveal that critical dimensions in such heterostructures can be quantified by a unique critical core radius and a critical shell thickness, which is dependent on the core radius. It is anticipated that this work will serve as a guide to determine the feasibility of specific coherently strained nanowire heterostructure designs. © 2006 American Vacuum Society. DOI: 10.1116/1.2216715

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures

In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-s...

متن کامل

Observation and Control of Interfacial Defects in ZnO/ZnSe Coaxial Nanowires

Observation and Control of Interfacial Defects in ZnO/ZnSe Coaxial Nanowires W.A. Bhutto, Z.M. Wu∗, Y.Y. Cao, W.P. Wang and J.Y. Kang∗ Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University Xiamen 361005, P.R. China ZnO/ZnSe coaxial nanowires with di erent ZnO core diameters were synthesized by using a two-step chemical vapor deposition. The ...

متن کامل

Internal structure of multiphase zinc-blende wurtzite gallium nitride nanowires.

In this paper, the internal structure of novel multiphase gallium nitride nanowires in which multiple zinc-blende and wurtzite crystalline domains grow simultaneously along the entire length of the nanowire is investigated. Orientation relationships within the multiphase nanowires are identified using high-resolution transmission electron microscopy of nanowire cross-sections fabricated with a ...

متن کامل

Band discontinuities in zinc-blende and wurtzite AlN/SiC heterostructures

The AlN/SiC band discontinuities in zinc-blende ~110!, ~111!, and wurtzite ~0001! heterostructures were examined using the ab initio pseudopotential approach. At the nonpolar AlN/SiC~110! junction, we find a valence-band offset of 1.7 eV. At the polar heterojunctions the band alignment depends on the interface composition, and valence-band offsets as high as 2.5 eV are obtained for neutral inte...

متن کامل

Nanowire-Induced Wurtzite InAs Thin Film on Zinc-Blende InAs Substrate

2009 WILEY-VCH Verlag Gmb Synthesis of materials with a desired crystal structure is a major challenge in materials engineering. Single-crystal thin films grown by epitaxy typically adopt the same crystal structure as that of their substrates. Here, we report on the observation of a wurtzite InAs thin-film structure on a zinc-blende InAs substrate. Electron-backscatter diffraction (EBSD) and tr...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2006