Low-temperature homoepitaxial growth on nonplanar Si substrates
نویسنده
چکیده
The kinetics associated with the breakdown of epitaxy at low temperatures are studied for growth onto a number of Si surfaces, including (OOl), (117), (115), and (113). These surfaces are all initially generated at trench edges on a single patterned substrate. Growth on each of these surfaces at low temperatures is shown to result in a well-defined crystalline-to-amorphous transition. The epitaxial thicknesses hepi have been measured over a range of substrate temperatures below 280 “C, and activation energies characteristic of this transition were determined. In general, the breakdown in epitaxy occurs such that h~~~(001)~h~~~(117)~h~~~(115)~h~~~(113)~ Growth at slightly higher
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