Atomic layer deposition of TiN films Growth and electrical behavior down to sub-nanometer scale
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Enhanced Physical Properties Of Indium Tin Oxide Films Grown on Zinc Oxide-Coated Substrates
Structural, electrical and optical properties of indium tin oxide or ITO (In2O3:SnO2) thin films on different substrates are investigated. A 100-nm-thick pre-deposited zinc oxide (ZnO) buffer layer is utilized to simultaneously improve the electrical and optical properties of ITO films. High purity ZnO and ITO layers are deposited with a radio frequency sputtering in argon ambient with plasma p...
متن کاملStructural Properties of Post Annealed ITO Thin Films at Different Temperatures
Indium tin oxide (ITO) thin films were deposited on glass substrates by RF sputtering using an ITO ceramic target (In2O3-SnO2, 90-10 wt. %). After deposition, samples were annealed at different temperatures in vacuum furnace. The post vacuum annealing effects on the structural, optical and electrical properties of ITO films were investigated. Polycrystalline...
متن کاملCOMPARISON OF PROPERTIES OF TiN/TiCN AND PLASMA NITRIDING/TiCN FILMS DEPOSITED ON THE TOOL STEEL BY PULSED DC- PACVD
In this work, TiN/TiCN & PN/TiCN multilayer films were deposited by plasma- assisted chemical vapour deposition (PACVD). Plasma nitriding (PN) and TiN intermediate layer prior to coating leads to appropriate hardness gradient and it can greatly improve the mechanical properties of the coating. The composition, crystalline structure and phase of the films were investigated by X-ray d...
متن کاملAtomic Layer Deposition of Tin Oxide with Nitric Oxide as an Oxidant Gas
Atomic layer deposition (ALD) of tin oxide (SnO2) thin films was achieved using a cyclic amide of Sn(II) (1,3-bis(1,1-dimethylethyl)4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene) as a tin precursor and nitric oxide (NO) as an oxidant gas. Film properties as a function of growth temperature from 130–250 C were studied. Highly conducting SnO2 films were obtained at 200–250 Cwith the growt...
متن کاملAtomic Layer Deposition of Praseodymium Aluminum Oxide for Electrical Applications
Praseodymium aluminum oxide (PAO) thin films were grown by atomic layer deposition (ALD) from a new precursor, tris(N,N′-diisopropylacetamidinato) praseodymium, (Pr(amd)3), trimethylaluminum (TMA), and water. Smooth, amorphous films having varying compositions of the general formula PrxAl2–xO3 were deposited on HF-last silicon and analyzed for physical and electrical characteristics. The films ...
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