Magnetotransport properties in „1100...- and „0001...-oriented MnAs films on GaAs substrates

Magnetic-field dependence of the resistivities in MnAs 1100 films on GaAs 001 and MnAs 0001 films on GaAs 111 B is investigated at low temperatures. Correspondence of the features in the longitudinal and transverse resistivities under reorientations of the magnetization enables us to distinguish the anisotropic magnetoresistance effect from the effects originating from the band structure of MnAs. Simultaneous contributions of holes and electrons are evidenced for the 1100 -oriented films, whereas the transport is almost completely dominated by holes for the 0001 -oriented films. The magnetization flip by an in-plane magnetic field applied along the magnetic easy axis generates jumps in the longitudinal resistivity owing to the magnetoresistance originating from the band-structure effect. © 2007 American Institute of Physics. DOI: 10.1063/1.2739213