Single-electron charging phenomena in silicon nanopillars with and without silicon nitride tunnel barriers
نویسندگان
چکیده
Electron transport in silicon nanopillars has been studied for pillars with zero, one, or two silicon nitride barrier layers of 2 nm thickness. Evidence of Coulomb blockade is presented and the role of the silicon nitride layers is discussed. Wide zero current regions are observed for some devices with two silicon nitride tunnel barriers and these are attributed to the formation of fully depleted quantum dots. © 2001 American Institute of Physics. @DOI: 10.1063/1.1405825#
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