Data recovery from damaged electronic memory devices

High value crime involving mobile phones sometimes require examination of highly damaged, possibly exploded devices, currently beyond the capabilities of existing methods. In the pursuit of a forensically sound method to examine damaged memory devices we are investigating a number of techniques to access and analyse samples. Backside processing involving lapping steps, followed by a BOE / TMAH etch is used to access the underside of the bare die, allowing scanning probe techniques, such as Scanning Kelvin Probe Microscopy (SKPM), to examine the charges held on individual floating gate transistors. Despite various remaining challenges and possible techniques to be investigated, this methodology is proving promising for the development of a viable forensic tool.