The Foundations of the EKV MOS Transistor Charge-Based Model
نویسندگان
چکیده
This paper presents the foundations that lead to the EKV MOS transistor compact model. It describes all the basic concepts required to derive the large-signal and smallsignal charge-based model that is valid in all modes of inversion, from weak to strong inversion through moderate inversion. The general small-signal model valid in quasistatic and non-quasi-static operation is also presented and all its components are described. It is also shown that the charge-based approach allows to derive the gm/ID characteristic that is valid in all modes of inversion.
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