Narrow-Linewidth Homogeneous Optical Emitters in Diamond Nanostructures via Silicon Ion Implantation
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چکیده
منابع مشابه
Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures
The controlled creation of defect centre-nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ∼32 nm latera...
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A huge variety of optical colour centres can be found in diamond, emitting in its whole wide transparency range. Although several of these centres have been demonstrated as single-photon emitters, none of them meets all of the requirements of an ideal single-photon source. In this view, we discuss the properties of prominent optical centres, such as the nitrogen vacancy, the silicon vacancy or ...
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We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV(-)) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystal...
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Ion-beam bombardment/rnilling was used for sharpening of diamond particles deposited on ends of silicon tips. Radii curvature of diamond coating down to about 20 nm have been formed in such a way. Field emission experiments with sharpened diamond coated emitters have shown that the ion beam treatment effects a considerable shift of current-voltage characteristics of in the lower voltage region.
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