Electronic Structure Calculations for Cr 1 - x Al x CNF Project # 1845 - 09 Principal
نویسنده
چکیده
Intermetallic compounds containing transition metals and sp elements often form a gap at the Fermi energy due to hybridization. This gap can be exploited for applications, making these compounds the subject of intense study. For example, intermetallic semiconductors are attractive for use in thermoelectric devices due to their typically small gaps and large Seebeck coefficients (ex. ZrNiSn) [1]. In magnetic compounds, the gap is asymmetric with regard to spin; if a full gap occurs at the Fermi energy for one spin but not for the other, the result is a half metal (ex. Co2MnAl) [2]. Half-metals are important for spintronics applications such as spin transistors and non-volatile logic.
منابع مشابه
P H Y S electronic Structure Calculations for Cr 1 - xAlx CNF Project Number : 1845 - 09 Principal Investigator :
Cr3Al shows semiconductor-like behavior, attributed to a combination of antiferromagnetism and chemical ordering. We present a detailed study of chemical ordering in Cr3Al. Using density functional theory within the Korringa Kohn Rostoker (KKR) formalism, we consider five possible Cr3Al structures. The chemically ordered, rhombohedrally distorted X-phase has the lowest energy and should therefo...
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