Characterization of a thick layer a-Si:H pixel detector with TFA technology using a scanning electron microscope

The electron beam induced current (EBIC) technique was used to characterize a 32 lm thick hydrogenated amorphous silicon n–i–p diode deposited on top of an ASIC, containing several channels of active feedback pre-amplifiers (AFP) with peaking time of 5 ns. The homogeneity of the sample together with the edge effects induced by the unevenness of the ASIC substrate were studied with low doses of 10–30 keV electron beam. The degradation of a-Si:H pixel detectors was measured with intense electron beam. Their charge collection and transient time were characterized with a 660 nm pulsed laser before and after the thermal annealing. All the diodes show approximately a full recovery of charge collection after thermal annealing. 2006 Elsevier B.V. All rights reserved. PACS: 73.61.Jc; 61.43.Dq; 29.40.Wk; 61.82.Fk