Terahertz electromodulation spectroscopy of electron transport in GaN
نویسندگان
چکیده
Time-resolved terahertz (THz) electromodulation spectroscopy is applied to investigate the high-frequency transport of electrons in gallium nitride at different doping concentrations and densities of threading dislocations. At THz frequencies, all structures reveal Drude transport. The analysis of the spectral response provides the fundamental transport properties, such as the electron scattering time and the electrons’ conductivity effective mass. We observe the expected impact of ionized-impurity scattering and that scattering at threading dislocations only marginally affects the high-frequency mobility.
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