High-Temperature Cyclic Fatigue-Crack Growth in Monolithic Ti3SiC2 Ceramics
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چکیده
identical slip planes) and walls or kink boundaries. Thus, in addition to regular slip, mechanisms for ambient temperature The cyclic fatigue behavior of reactive hot-pressed Ti3SiCz plastic deformation in Ti3SiCz are thought to involve the ceramics are examined at temperatures from ambient to 1200°C readjustment of local stress and strain fields from kink band with the objective of characterizing the high-temperature (boundaries) formation, buckling and delamination of individual mechanisms controlling crack growth, Comparisons are made of grains, the delamination and associated damage being contained two monolithic Ti3SiCz materials with fine(3-10 pm) and coarseby the kink boundaries (6). The delaminations typically occur at grained (70-300 pm) microstructures. Results indicate that the the intersection of the walls and arrays and result in the &, fatigue thresholds are not substantially changed between 250 annihilation of the latter (6). It iS this containment Of damage that and 1 1000~; however, there is a s h q decrease in mth at 12000~ is believed to be the major source of damage tolerance in Ti3SiC,; (above the “ductile-brittle” transition temperature), where in fact, the plastic behavior in general is unusual for carbides and significant high-temperature deformation and damage are first is believed to be due to its layered structure and the metallic apparent. Of the two microstructures, the coarse-grained Ti3SiCz nature of the bonding (6). exhibits substantially higher cyclic-crack growth resistance at both with Such intrinsic deformation and toughness properties, Ti3S1C2 ambient and elevated temperatures. This results from an clearly offers Some Potential for many structural applications; enhanced effect in the coarser grained microstruc~e of crack however, if this is to be realized, it iS important that some bridging in the crack wake from both grains and lamellae within aSSeSSment be made Of its crack-growth behavior, Particularly at grains, and from the correspondingly more tortuous crack path. elevated temperatures. It is the objective of the present paper to examine the subcritical crack-growth characteristics of Ti3SiC2 Introduction under cyclic loads, in both fineand coarse-grained microstructural conditions and at temperatures from ambient to 120ooc, with the objective of defining the salient damage and Crack-tiP shielding n~chanisms that govern crack advance. The polycrystalline ternary carbide, Ti3SiCz, exhibits a surprising combination of properties for a ceramic; for example, it displays high toughness (Kc > 8 MPadm) and a ratio of hardness (-4 GPa) to elastic modulus (-320 GPa) more typical of a ductile material. Background Processed by reactive hot-pressing techniques from powders of Ti, sIc and graphite, T ~ ~ s ~ c ~ also shows a range of inelastic The fracture toughness and cyclic fatigue-crack growth behavior deformation modes not typically Seen in cermics at room of monolithic Ti3SiCz at ambient temperatures was first temperature (1-6), including grain bending, grain buckling, and characterized by Gilbert et al. (7) in both fine(3-10 Pm) and significant amounts of basal slip. Indeed, in general Ti3SiCz coarse-grained (50-200 Pm) Conditions. FatiWe-crack growth appears to be one of the most damage tolerant of all nonthresholds, M t h , Were found to be as high as 6 and 9 MPadm, transforming monolithic ceramics (1-7). respectively, in the fine and coarse-grained structures; In Ti3SiCz, basal plane dislocations are mobile and multiply at corresponding fracture toughnesses, K, were measured (at the room temperature. They are confined to two orthogonal peak of the R-curve) at, respectively, 9.5 and 16 MPadm. The directions: basal plane arrays (wherein the dislocations exist on high toughness (the K, value for the coarse-grained structure is Fatigue L Fracture Behavior of High Temperature Materials Edited by P.K. Liaw TMS (The Minerals, Metals & Materials Society), 2000
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High-temperature Cyclic Fatigue-crack Growth Behavior in an in Situ Toughened Silicon Carbide
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