1 . 3 l m GaAs = GaAsSb quantum well laser grown by solid source molecular beam epitaxy
نویسنده
چکیده
A highly strained GaAs=GaAs0.64Sb0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 mm pulsed operation with a low threshold current density of 300 A=cm. The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature.
منابع مشابه
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