Modeling Frequency Response of 65 nm CMOS RF Power Devices
نویسندگان
چکیده
This paper presents a model for the frequency response of 65 nm RF power CMOS devices as a function of device width. We find that the cut-off frequency (fT) and maximum oscillation frequency (fmax) decrease with increasing device width. Small-signal equivalent circuit extractions reveal that the main reason for the degradation in fT and fmax is the presence of non-scalable parasitic resistances in the gate and drain of wide devices. Simplified expressions for fT and fmax that include these parasitic effects have been derived and shown to be very accurate.
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