A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection
نویسندگان
چکیده
0038-1101/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.sse.2012.05.061 ⇑ Corresponding author. E-mail address: [email protected] (J. Wan). We experimentally demonstrate a field-effect transistor with a single front gate built on fully-depleted silicon-on-insulator substrate that possesses extremely steep switching slope ( 1 mV/decade) and gate-controllable hysteresis. The mechanism for the sharp switching, confirmed by simulations, involves the positive feedback between the gate-modulated charge injection barriers and the electron and hole components of the source–drain current. The transistor is named Z-FET as it features zero impact ionization (unlike thyristors) and zero subthreshold swing. 2012 Elsevier Ltd. All rights reserved.
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