Atomic structure of chlorinated Si(113) surfaces
نویسندگان
چکیده
J. I. Flege,1,2,* Th. Schmidt,2 M. Siebert,2 G. Materlik,3 and J. Falta2 1Hamburger Synchrotronstrahlungslabor HASYLAB/DESY, Notkestrasse 85, 22603 Hamburg, Germany 2Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany 3Diamond Light Source Limited, Diamond House, Chilton, Didcot, Oxfordshire OX11 0DE, United Kingdom Received 27 September 2007; revised manuscript received 23 July 2008; published 21 August 2008
منابع مشابه
Atomic structures and phase transitions of Si„113... reconstructed surfaces: Kikuchi electron holography studies
Atomic structures of the reconstructed Si~113! surfaces were studied by using Kikuchi electron holography ~KEH!. Three-dimensional images show clearly the characteristics of the puckering model for both Si~113!~332! and ~331! surfaces. The KEH results support the puckering model. Based on our studies, the tetramers are puckering alternatively in the ~332! surface. Whereas in ~331! structures, t...
متن کاملThe Structure of Silicon Surfaces from ( 001 ) to ( 111 )
We describe the structure of silicon surfaces oriented between (001) and (111) as determined by scanning tunneling microscopy (STM) and first-principles, total-energy calculations. In addition to reviewing and reproducing the structures reported for the few surfaces previously studied, we describe a number of additional surfaces in order to provide a complete overview of the (001)-to-(111) surf...
متن کاملAtomic-scale perspective on the origin of attractive step interactions on Si„113..
Recent experiments have shown that steps on Si~113! surfaces self-organize into bunches due to a competition between long-range repulsive and short-range attractive interactions. Using empirical and tight-binding interatomic potentials, we investigate the physical origin of the short-range attraction, and report the formation and interaction energies of steps. We find that the short-range attra...
متن کاملThermal etching of GaAs(113) surfaces
We discuss scanning electron micrographs and atomic force microscope images of thermally etched GaAs(113) surfaces. The GaAs(113)A and GaAs(113) B surfaces are compared. The polarity of the surface leads to a different morphology for the two surfaces after thermal etching. It is found that the Ga-enriched droplets, which form under As-deficient conditions at higher temperatures, are sitting on ...
متن کاملRelative stability of Si surfaces: A first-principles study
Surface energies of Si(001), (110), (111), and (113) surfaces with different reconstructions are calculated systematically using first-principles total-energy method. In order to quantitatively compare their relative stability, the surface energies of different surface orientations and their respective theoretical bulk atom energies are determined simultaneously by linear fitting slab supercell...
متن کامل