Topological Oxide Insulator in Cubic Perovskite Structure

نویسندگان

  • Hosub Jin
  • Sonny H. Rhim
  • Jino Im
  • Arthur J. Freeman
چکیده

The emergence of topologically protected conducting states with the chiral spin texture is the most prominent feature at the surface of topological insulators. On the application side, large band gap and high resistivity to distinguish surface from bulk degrees of freedom should be guaranteed for the full usage of the surface states. Here, we suggest that the oxide cubic perovskite YBiO3, more than just an oxide, defines itself as a new three-dimensional topological insulator exhibiting both a large bulk band gap and a high resistivity. Based on first-principles calculations varying the spin-orbit coupling strength, the non-trivial band topology of YBiO3 is investigated, where the spin-orbit coupling of the Bi 6p orbital plays a crucial role. Taking the exquisite synthesis techniques in oxide electronics into account, YBiO3 can also be used to provide various interface configurations hosting exotic topological phenomena combined with other quantum phases.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Electronic and structural properties of a 4d perovskite: Cubic phase of SrZrO3

First-principles density-functional calculations are performed within the local-density approximation to study the electronic properties of SrZrO3, an insulating 4d perovskite, in its high-temperature cubic phase, above 1400 K, as well as the generic 3d perovskite SrTiO3, which is also a d 0 insulator and cubic above 105 K, for comparison reasons. The energy bands, density of states, and charge...

متن کامل

Synthesis, Structures, and Physical Properties of Yttrium-Doped Strontium Manganese Oxide Films

Cubic strontium manganese oxide is an end-member of the colossal magnetoresistive (CMR) family of manganese-based perovskites, Ln1-xAExMnO3. Because normal synthesis conditions lead to the 4-H hexagonal polymorph, high-pressure conditions are typically used to obtain the cubic perovskite polymorph. In this work, we describe the synthesis and structural/physical characterization of the cubic per...

متن کامل

Abstract Submitted for the MAR07 Meeting of The American Physical Society Doping variation of orbitally-induced anisotropy in electronic structure of the perovskite-type vanadium oxides

Submitted for the MAR07 Meeting of The American Physical Society Doping variation of orbitally-induced anisotropy in electronic structure of the perovskite-type vanadium oxides JUN FUJIOKA, SHIGEKI MIYASAKA, Dept. of Appl. Phys., Univ. of Tokyo, YOSHINORI TOKURA, Dept. of Appl. Phys., Univ. of Tokyo, ERATO-SSS, AIST-CERC — Recently, the perovskite-type vanadium oxide LaVO3 has been attracting m...

متن کامل

Factors Controlling the Redox Activity of Oxygen in Perovskites: From Theory to Application for Catalytic Reactions

Triggering the redox reaction of oxygens has become essential for the development of (electro) catalytic properties of transition metal oxides, especially for perovskite materials that have been envisaged for a variety of applications such as the oxygen evolution or reduction reactions (OER and ORR, respectively), CO or hydrocarbons oxidation, NO reduction and others. While the formation of lig...

متن کامل

Strain-Induced Ferroelectric Topological Insulator.

Ferroelectricity and band topology are two extensively studied yet distinct properties of insulators. Nonetheless, their coexistence has never been observed in a single material. Using first-principles calculations, we demonstrate that a noncentrosymmetric perovskite structure of CsPbI3 allows for the simultaneous presence of ferroelectric and topological orders with appropriate strain engineer...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 3  شماره 

صفحات  -

تاریخ انتشار 2013