Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si
نویسندگان
چکیده
The band alignment of ZrO2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO2/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO2/interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10-6 A/cm2.
منابع مشابه
Interface instabilities and electronic properties of ZrO 2 on silicon ( 100 )
The interface stability of Zr-based high-k dielectrics with an oxide buffer layer was explored with x-ray shy=1254 eVd and ultraviolet shy=21.2 eVd photoemission spectroscopy. Zirconium oxide films were grown and characterized in situ in a stepwise sequence to explore their chemical stability and electronic properties as a function of film thickness and processing conditions. The buffer layers ...
متن کاملEffects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride
The effects of different post-deposition annealing ambients (oxygen, argon, forming gas (95% N2 + 5% H2), and nitrogen) on radio frequency magnetron-sputtered yttrium oxide (Y2O3) films on n-type gallium nitride (GaN) substrate were studied in this work. X-ray photoelectron spectroscopy was utilized to extract the bandgap of Y2O3 and interfacial layer as well as establishing the energy band ali...
متن کاملEffects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon
X-ray photoelectron spectroscopy (XPS) and medium energy ion scattering (MEIS) are used to determine chemical bonding and composition of ultra-thin films of mixed yttrium, silicon, and oxygen, formed by oxidation of metal on clean and pre-treated silicon. XPS and MEIS analyses indicate that oxidation of yttrium on bare silicon results in a fully oxidized film with a significant fraction of Y-O-...
متن کاملDeconvoluted Si 2p Photoelectron Spectra of Ultra thin SiO2 film with FitXPS method
The main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. The obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental...
متن کاملEffects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition
The influences of annealing temperature in N2 atmosphere on interfacial chemical properties and band alignment of AlN/Si structure deposited by atomic layer deposition have been investigated based on x-ray photoelectron spectroscopy and spectroscopic ellipsometry. It is found that more oxygen incorporated into AlN film with the increasing annealing temperature, resulting from a little residual ...
متن کامل