Novel Transient Phenomena in Heterojunction Bipolar Transistors
نویسندگان
چکیده
The interaction between transferred-electron effect and base widening under transient conditions in III-V heterojunction bipolar transistors is considered. Modification of the collector field profile with an n+ doping spike is shown to cause a time delay for the onset of Kirk effect creating conditions for the inception of charge instabilities. Numerical simulations suggest the possibility of sustainable intrinsic current oscillations in properly engineered bipolar transistor structures.
منابع مشابه
Transient electro-thermal characterization of Si–Ge heterojunction bipolar transistors
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