Experimental Heavy-ion Seu Cross-sections of Sram Memory Components
نویسنده
چکیده
A series of experiments were carried out at the Radiation Effects Facility (RADEF) [1] in the Accelerator laboratory of the University of Jyväskylä. Experiments consisted in irradiating the memory arrays in vacuum with a variety of heavy ions. The effect of Linear Energy Transfer (LET) of incoming ion and component operating mode (static/active) [2] on the component failure mode (SEU/MBU/SEFI) and rate was investigated. Results from the dynamic tests for 65nm SRAM are presented in the following figures. Based on the obtained results, on-orbit failure rates can be extrapolated by using models for radiative environment and equivalent spacecraft shielding.
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