Modelling Nonlocal Processes in Semiconductor Devices with Exponential Difference Schemes Part 2: Numerical Methods and Computational Experiments
نویسندگان
چکیده
In a companion paper 11], based on the concept of relaxation time we considered the hierarchy of models for semiconductor devices. We focused at the quasi-hydrodynamic model as a reasonable compromise for the modelling of nonlocal and non-equilibrium processes in semiconductor plasma. The model was reduced to a form that is convenient for the numerical discretisation. In this paper we construct eecient exponential diierence schemes and apply them to modelling transport phenomena in semiconductors. Stability conditions, computational convergence and algorithmic realisations of the proposed schemes are discussed with numerical examples.
منابع مشابه
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