Quantum and classical scattering times due to charged dislocations in an impure electron gas
نویسندگان
چکیده
We derive the ratio of transport and single-particle relaxation times in threeand two-dimensional electron gases due to scattering from charged dislocations in semiconductors. The results are compared to the respective relaxation times due to randomly placed charged impurities. We find that the ratio is larger than the case of ionized impurity scattering in both threeand two-dimensional electron transport.
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