A Qualitative Study on Optimized MOSFET Doping Profiles
نویسندگان
چکیده
We present the two-dimensional optimization of the acceptor doping profile of a 0.25 /im MOSFET which improves the drive current by 48% compared to a uniformly doped device delivering the same drain-source leakage current. Various values for the supply voltage and the allowed leakage current are used to qualitatively investigate their influence on the optimal profile.
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